1/4 STPS5L40-C2 july 2003 - ed: 2a power schottky rectifier ? axial power schottky rectifier suited for switch mode power supplies and high frequency inverters. packaged in do-201ad, this device is intended for use in low voltage output for small battery chargers & consumer smps such as dvd and set-top-box. description n negligible switching losses n low forward voltage drop for higher efficiency. n low thermal resistance n avalanche capability specified features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 40 v i f(rms) rms forward current 15 a i f(av) average forward current tl = 100c d = 0.5 5a i fsm surge non repetitive forward current half wave, single phase tp=10ms 150 a p arm repetitive peak avalanche power tp = 1s tj = 25c 2700 w t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature * 150 c dv/dt critical rate of rise of reverse voltage (rated v r , tj = 25c) 10000 v/s absolute ratings (limiting values) i f(av) 5a v rrm 40 v tj (max) 150c v f (max) 0.44 v main product characteristics do-201ad STPS5L40-C2 *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink obsolete product(s) - obsolete product(s)
STPS5L40-C2 2/4 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 0.2 ma tj = 100c 825 tj = 125c 25 75 v f * forward voltage drop tj = 25c i f =5a 0.44 0.50 v tj = 100c 0.40 0.46 tj = 125c 0.38 0.44 pulse test : * tp = 380 s, d <2% to evaluate the maximum conduction losses use the following equation: p=0.34xi f(av) + 0.028 x i f 2 (rms) static electrical characteristics symbol parameter value unit r th(j-a) junction to ambient 75 c/w r th(j-l) junction to leads lead length = 10 mm 15 c/w thermal parameters 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 if(av)(a) pf(av)(w) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 fig. 1: conduction losses versus average current. 0 1 2 3 4 5 6 0 25 50 75 100 125 150 tamb(c) rth(j-a)=rth(j-l) rth(j-a)=75c/w if(av)(a) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5). 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 t (c) j p(t) p (25c) arm p arm fig. 4: normalized avalanche power derating versus junction temperature. 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm fig. 3: normalized avalanche power derating versus pulse duration. obsolete product(s) - obsolete product(s)
STPS5L40-C2 3/4 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 5 10 15 20 25 30 35 40 vr(v) tj=150c tj=125c tj=25c tj=100c tj=75c tj=50c ir(ma) fig. 7: reverse leakage current versus reverse voltage applied (typical values). 10 100 1000 1 10 100 vr(v) f=1mhz vosc=30mv tj=25c c(pf) fig. 8: junction capacitance versus reverse voltage applied (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 vfm(v) tj=25c (maximum values) tj=125c (maximum values) tj=125c (maximum values) tj=125c (typical values) tj=125c (typical values) ifm(a) fig. 9-1: forward voltage drop versus forward current (low level). 1 10 100 0.0 0.3 0.5 0.8 1.0 1.3 1.5 vfm(v) tj=25c (maximum values) tj=125c (maximum values) tj=125c (maximum values) tj=125c (typical values) tj=125c (typical values) ifm(a) fig. 9-2: forward voltage drop versus forward current (high level). 0 2 4 6 8 10 12 14 16 18 1.e-03 1.e-02 1.e-01 1.e+00 t(s) ta=25c ta=50c ta=100c im(a) i m t d =0.5 fig. 5: non repetitive surge peak forward current versus overload duration (maximum values). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 tp(s) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp zth(j-a)/rth(j-a) fig. 6: relative variation of thermal impedance junction to ambient versus pulse duration. obsolete product(s) - obsolete product(s)
STPS5L40-C2 4/4 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data do-201ad plastic j a i d 55.9 50.8 h g = d + 0.2 to 0.4 mm ee r0.5 r0.5 b min max k f (g = hole in the pcb) c 10 max ref. dimensions millimeters inches min. typ. max. min. typ. max. a 9.5 0.374 b 13.75 17.75 0.541 0.699 c 5.3 0.208 d 1.3 0.051 e 3.53 0.139 f 2.4 3.15 3.9 0.094 0.124 0.153 g 1.6 0.063 h 14.9 15.6 0.587 0.614 i 0.5 0.6 0.7 0.019 0.024 0.027 j 18.78 0.739 k 3.8 4.8 0.150 0.189 ordering type marking package weight base qty delivery mode STPS5L40-C2 stps5l40 do-201ad 1.12g 500 ammopack n white band indicates cathode n epoxy meets ul94,v0 0 10 20 30 40 50 60 70 80 012345678910 s(cm2) rth(j-a)(c/w) fig. 10: thermal resistance junction to ambient versus copper surface under each lead (epoxy printed board fr4, cu = 35m). 0 10 20 30 40 50 60 70 80 5 10152025 lleads(cm) rth(j-a): epoxy printed circuit board fr4 (cu= 35m) rth(j-l) rth(c/w) fig. 11: thermal resistances versus leads length. obsolete product(s) - obsolete product(s)
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